Research on Cast Polycrystalline Silicon Ingot for Low-Cost Solar Cell Application 低成本太阳电池用浇铸多晶硅锭的研究
Heavy doped polycrystalline silicon ( Poly-Si) nanoflims have great gauge factors ( GF) and good temperature characteristics, and they are ideal piezoresistive materials for mechanics sensors. 重掺杂多晶硅纳米薄膜具有较大的应变系数和良好的温度特性,是制作力学量传感器的理想压阻材料。
Atmospheric-pressure Plasma Chemical Vapor Deposition for Polycrystalline Silicon Preparation from SiCl_4 and OES Diagnosis 由SiCl4制备多晶硅的大气压等离子体化学气相沉积及发射光谱诊断
Crystallographic Features Study of Polycrystalline Silicon Ingot for Solar Cells 用于太阳能电池的多晶硅锭片晶体学特征研究
The research of the radiative heat transfer models for the hearth inside polycrystalline silicon reduction furnace 多晶硅还原炉炉膛内的辐射传热模型研究
This lamp is the sources of energy with monocrystalline silicon solar energy cell or polycrystalline silicon solar energy cell; 该灯以单晶硅太阳能电池或多晶硅太阳能电池为能源;
Degradation of Metal-Induced Laterally Crystallized p-Type Polycrystalline Silicon Thin Film Transistors under DC Bias Stress p型金属诱导横向结晶多晶硅TFT直流应力下的退化研究
Polycrystalline silicon solar energy cell, low cost, the highest conversion efficiency is18% in the lab, is12% in the industrial production. 多晶硅太阳能电池,成本低廉,其实验室最高转换效率为18%,工业规模生产的转换效率为12%。
The separation process about deoxidizing stove tail gas in the modified siemens arts and crafts in polycrystalline silicon production was improved. 对改良西门子法多晶硅生产中尾气分离工艺进行了改进。
Polycrystalline silicon is a kind of form of monatomic silicon. 多晶硅是单质硅的一种形态。
Polycrystalline silicon is the basic raw material in information and solar photovoltaic power generation industries, it is classified as strategic material in many countries in the world. 多晶硅是信息产业和太阳能光伏发电产业的基础原材料,世界多个国家将其列为战略性材料。
Summary on polycrystalline silicon production and its relation with chlor-alkali industry The low energy consumption technology of SiCl_4 from subsidiary of polysilicon 多晶硅生产概况及其与氯碱工业的关系多晶硅副产物四氯化硅的低耗能回收技术研究
Determination of Phosphorus in polycrystalline silicon by closed digestion-Phosphor-molybdenum Blue Spectrophotometry 密闭消解磷钼蓝光度法测定多晶硅中的磷
Fire Danger of Polycrystalline Silicon Production Artas and Crafts and Fire Security Measures 浅析多晶硅生产工艺火灾危险性及防火安全措施
Preparation method of polycrystalline silicon and status quo of solar cell development 多晶硅制备方法及太阳能电池发展现状
Polycrystalline silicon Examination method Vacuum zone-melting on boron GB/T4060-1983硅多晶真空区熔基硼检验方法
Determination of impurity elements in polycrystalline silicon by ICP-AES ICP-AES法测定多晶硅中的杂质元素
Surface Topography and Anti-reflection Characteristics of Polycrystalline Silicon Surface Prepared by Electric Discharge-electrolytic Combined Machining 电火花电解复合切割多晶硅的表面形貌及减反射特性研究
Boron is one of acceptor elements in polycrystalline silicon solar cells, which can influence the photo voltaic efficiency and stability of a solar cell. 硼是多晶硅太阳电池的受主元素,影响太阳电池的光电转换效率和稳定性。
Polycrystalline silicon Examination method Assessment of sandwiches on cross-section by chemical corrosion GB/T4061-1983硅多晶断面夹层化学腐蚀检验方法
Heating chamber is pivotal part of the polycrystalline silicon ingot production furnace. 加热室是多晶硅铸锭炉的关键部件之一。
An experimental results are reported here on the photoluminescence researched in terms of the solar battery made up of polycrystalline silicon. 报道了多晶硅太阳能电池材料的光致发光研究实验结果。
Then the investigation of polycrystalline silicon thin film have great significance. 因此,对多晶硅薄膜进行研究则具有重大意义。
The Influence of Laser Annealing on the Structure and Electrical Properties of Polycrystalline Silicon Films 激光退火对多晶硅结构和电学性能的影响
In the use of solar power, monocrystalline and polycrystalline silicon wafers play a very important role. 在太阳能利用上,单晶硅和多晶硅发挥了很大的作用。
The accurate and effective compact model for polycrystalline silicon thin film transistors is needed in the circuit simulation. 在电路仿真中,需要准确而有效的多晶硅薄膜晶体管集约模型。
The monocrystalline and polycrystalline silicon wafers are the main materials for the production of semiconductors and solar cells. 在制作半导体和太阳能电池中用到的最主要的材料都是单晶硅和多晶硅。
In the first part, we made some researches on Polycrystalline silicon solar cell production industry. 第一部分,我们做了与多晶硅太阳电池工业生产相关的研究。
Study the surface potential model for polycrystalline silicon thin film transistors under the quasi two-dimensional analysis. 研究了多晶硅薄膜晶体管基于准二维分析的表面势模型。